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Flash announcement

Ultra high density and ultra low leakage ROM at 65 nm

 

Denser than dense is what everyone in the semiconductor industry is looking for!
Every mm2 saved in return saves a good number of cents.
Its key “two-in-one” patent enables “tROMet Phoenix” to achieve challenging density, while equally offering ultra low leakage.

Typically, the silicon area of a 6-Mbit instance in 65 nm will decrease as far as 0.63 mm2 with only 1.2 uA leakage current,
and the same 6-Mbit instance in 90 nm will be as low as 0.95 mm2 with only 1.8 uA leakage current.

For more information, please visit:
65 nm ROM Products

 

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