SESAME uHVuLL 180 nm
ultra High Voltage |
ultra Low Leakage
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Power consumption becomes more and more critical with the growing complexity of the SoCs.
Embedding more directly battery supplied functions is one of the most efficient design technique to reduce the power consumption in sleep mode.
This creates a need for Standard Cell Libraries to support the corresponding High Voltage logic sections of the SoC. SESAME uHVuLL addresses this need by enabling operation up to 3.6 V, while dramatically reducing leakage compared to other solutions.
SESAME uHVuLL can be used for 2 different purposes:
- High voltage: 3.3V islets directly powered by the external battery and/or for the 3.3V pads
- Ultra Low leakage for any islet in the SoC at the nominal power supply
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Key benefits of SESAME uHVuLL
- Ultra Low Leakage operation: up to 1000 times less leaky!
- High-voltage standard cells thanks to high voltage thick oxide transistors
- Free “Try and Buy” evaluation tutorial
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Product Features
- Operation voltage: 1.6 to 3.6V
- DCDC converters can be provided as add-ons
- Provided with level shifters
- Migratable to any foundry
- High design yield and reliability thanks to our strict Virtual Fab Process™
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Deliverables
- Datasheet (ASCII)
- Specification (pdf)
- Simulation models (VHDL/Verilog Tetramax compatible)
- View for Synthesis including Timing Analysis Model and Power models (.LIB and .db)
- Flattened Netlist for LVS (CDL)
- Footprint (LEF), antenna LEF and process LEF
- Detailed Physical Block Description (GDSII)
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Add-ons
- Integrated Clock Gating Cells
- Level shifters
- Flip-flop with asynchronous set and reset
- Falling edge flip-flops
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