Memories silicon proven at TSMC 90 nm eFlash

Grenoble, France - June 01, 2015

Dolphin Integration is proud to announce that their memory offering at 90 nm eFlash process have fully passed the various stages of TSMC 9000 qualification. This guarantees innovative solutions with minimal risks and maximum reliability.

Dolphin Integration’s SpRAM RHEA, 1PRFile AURA, 2PRFile/DpRAM ERIS and sROMet PHOENIX are silicon proven to support smartcard, home application and more generally all MCU designs that need the best trade-off between area and power consumption.

As part of the partnership between TSMC and Dolphin Integration, these memories are available in TSMC’s sponsored program and enable to address true High Density and Low Power challenges through main key benefits:

  • SpRAM RHEA achieves up to 10% area savings*, ultra low leakage current, and drastically decreased dynamic power consumption,
  • 1PRFile AURA generator enables up to 30% area savings* and ultra low leakage,
  • 2PRFile/DpRAM ERIS proposes a trade-off between speed and ultra low leakage thanks to various VT options,
  • sROMet PHOENIX contributes to 5-10 % gain in density* with a denser architecture for metal programmable ROM.

*Comparison with standard solutions

More importantly, Dolphin Integration offers a wide range of qualified memories and standard cell libraries so as to offer Off-the-Shelf products endowed with differentiated optimizations to address a diversity of SoC requirements.

For a true power consumption optimization, these libraries can be delivered with their relevant voltage regulators thanks to the innovative offering of Reusable Power Kit Libraries.

For further information on these memory and standard cell libraries, click here or contact libraries@dolphin.fr.

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